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Growth of high-quality hexagonal InN on 3C-SiC (001) by molecular beam epitaxy

โœ Scribed by Hiroyuki Yaguchi; Yoshihiro Kitamura; Kenji Nishida; Yohei Iwahashi; Yasuto Hijikata; Sadafumi Yoshida

Publisher
John Wiley and Sons
Year
2005
Tongue
English
Weight
180 KB
Volume
2
Category
Article
ISSN
1862-6351

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