Formation of epitaxial β-SiC layers by fullerene-carbonization of silicon(001): a comparison between the use of C60 and C70 molecules
✍ Scribed by S. Henke; M. Philipp; B. Rauschenbach; B. Stritzker
- Publisher
- Elsevier Science
- Year
- 1996
- Tongue
- English
- Weight
- 301 KB
- Volume
- 36
- Category
- Article
- ISSN
- 0921-5107
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✦ Synopsis
By condensation of C6o and C7o fullerenes the formation of continuous, thick epitaxial t-SiC films on Si(001) and Si(lll) surfaces is possible, even at moderate temperatures (700 °C-1000 °C). The dependence of structure, topography, and composition of the epitaxial silicon carbide layers formed by C6o or C70 carbonization of silicon on the substrate temperature was studied by X-ray diffraction, atomic force microscopy, and Rutherford-backscattering analysis. It could be shown that the quality of the formed epitaxial t-SiC layers is extremely sensitive to the substrate temperature. In the case of C60 and a substrate temperature of 850 °C the growth of epitaxial t-SiC layers with only a small number of defects was observed. Lowering the substrate temperature to 775 °C resulted in t-SiC layers with a strong texture. Using C70 molecules the process temperature can be lowered further by 75 °C. High quality t-SiC layers with a low number of defects can be grown at a substrate temperature of as low as 775 °C.