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Surface passivation effects on AlGaN/GaN high-electron-mobility transistors with SiO[sub 2], Si[sub 3]N[sub 4], and silicon oxynitride

✍ Scribed by S. Arulkumaran; T. Egawa; H. Ishikawa; T. Jimbo; Y. Sano

Book ID: 126671025
Publisher: American Institute of Physics
Year: 2004
Tongue: English
Weight: 449 KB
Volume: 84
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.1642276

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