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Proton irradiation effects on GaN-based high electron-mobility transistors with Si-doped Al/sub x/Ga/sub 1-x/N and thick GaN cap Layers

✍ Scribed by Karmarkar, A.P.; Bongim Jun, ; Fleetwood, D.M.; Schrimpf, R.D.; Weller, R.A.; White, B.D.; Brillson, L.J.; Mishra, U.K.

Book ID: 120373445
Publisher: IEEE
Year: 2004
Tongue: English
Weight: 263 KB
Volume: 51
Category: Article
ISSN: 0018-9499
DOI: 10.1109/TNS.2004.839199

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