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Comment on "Annealing behavior of a proton irradiated Al/sub x/Ga/sub 1-x/N/GaN high electron mobility transistors grown by MBE"

✍ Scribed by Fan, L.; Yue Hao

Book ID
114617153
Publisher
IEEE
Year
2003
Tongue
English
Weight
172 KB
Volume
50
Category
Article
ISSN
0018-9383

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