Mo∕Al∕Mo∕Au Ohmic contact scheme for Al[sub x]Ga[sub 1−x]N∕GaN high electron mobility transistors annealed at 500 °C

✍ Scribed by Basu, A. ;Mohammed, F. M. ;Guo, S. ;Peres, B. ;Adesida, I.

• Book ID: 121774487
• Publisher: AVS (American Vacuum Society)
• Year: 2006
• Tongue: English
• Weight: 262 KB
• Volume: 24
• Category: Article
• ISSN: 0734-211X
• DOI: 10.1116/1.2178365