𝔖 Bobbio Scriptorium

✦ LIBER ✦

[IEEE Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM - Nara, Japan (14-18 May 2001)] Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) - A comparison of deep level effects on the DC characteristics of In/sub x/Ga/sub 1-x/P/In/sub 0.20/Ga/sub 0.80/As/GaAs and Al/sub 0.24/Ga/sub 0.76/As/In/sub 0.20/Ga/sub 0.80/As/GaAs high electron mobility transistors grown by solid source MBE

✍ Scribed by Yoon, S.F.; Yip, K.H.; Zheng, H.Q.; Gay, B.P.

Book ID: 126639009
Publisher: IEEE
Year: 2001
Weight: 392 KB
Category: Article
ISBN-13: 9780780367005
DOI: 10.1109/ICIPRM.2001.929127

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

[IEEE Conference Proceedings. 2001 Inter

[IEEE Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM - Nara, Japan (14-18 May 2001)] Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) - High power density and power added efficiency of Al/sub 0.5/In/sub 0.5/P/InGaAs doped-channel HFETs

✍ Chiu, H.C.; Yang, S.C.; Chan, Y.J.; Kuo, J.M. 📂 Article 📅 2001 🏛 IEEE ⚖ 304 KB

[IEEE 1994 IEEE 6th International Confer

[IEEE 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM) - Santa Barbara, CA, USA (27-31 March 1994)] Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM) - Control of the interface roughness in highly strained In/sub x/Ga/sub 1-x/As/In/sub 0.52/Al/sub 0.48/As heterostructures

✍ Garcia Perez, M.A.; Benyattou, T.; Tabata, A.; Guillot, G.; Gendry, M.; Drouot, 📂 Article 📅 1994 🏛 IEEE ⚖ 326 KB

[IEEE Conference Proceedings. Eleventh I

[IEEE Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) - Davos, Switzerland (16-20 May 1999)] Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362) - Higher mobility with high concentration of 2DEG in pseudomorphic In/sub 0.7/Ga/sub 0.3/As/In/sub 0.52/Al/sub 0.48/As quantum-well HEMT structure with [411]A super-flat interfaces grown on [411]A InP substrate by MBE

✍ Hiyamizu, S.; Kitada, T.; Aoki, T.; Higashiwaki, M.; Shimomura, S. 📂 Article 📅 1999 🏛 IEEE 🌐 English ⚖ 112 KB