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Characterization of different-Al-content Al[sub x]Ga[sub 1−x]N/GaN heterostructures and high-electron-mobility transistors on sapphire

✍ Scribed by Arulkumaran, S.; Egawa, T.; Ishikawa, H.; Jimbo, T.

Book ID: 121529818
Publisher: AVS (American Vacuum Society)
Year: 2003
Tongue: English
Weight: 483 KB
Volume: 21
Category: Article
ISSN: 0734-211X
DOI: 10.1116/1.1556398

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