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Effects of partially occupied sub-bands on two-dimensional electron mobility in Al[sub x]Ga[sub 1âx]N/GaN heterostructures

✍ Scribed by Asgari, A.

Book ID: 121085302
Publisher: American Institute of Physics
Year: 2004
Tongue: English
Weight: 385 KB
Volume: 95
Category: Article
ISSN: 0021-8979
DOI: 10.1063/1.1635654

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