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Annealing behavior of a proton irradiated AlxGa1-x N/GaN high electron mobility transistor grown by MBE

✍ Scribed by Cai, S.J.; Tang, Y.S.; Li, R.; Wei, Y.Y.; Wong, L.; Chen, Y.L.; Wang, K.L.; Mary Chen; Schrimpf, R.D.; Keay, J.C.; Galloway, K.F.

Book ID: 114538025
Publisher: IEEE
Year: 2000
Tongue: English
Weight: 91 KB
Volume: 47
Category: Article
ISSN: 0018-9383
DOI: 10.1109/16.822272

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