Improvement of AlGaN∕GaN high electron mobility transistor structures by in situ deposition of a Si[sub 3]N[sub 4] surface layer

✍ Scribed by Derluyn, J.; Boeykens, S.; Cheng, K.; Vandersmissen, R.; Das, J.; Ruythooren, W.; Degroote, S.; Leys, M. R.; Germain, M.; Borghs, G.

• Book ID: 120977501
• Publisher: American Institute of Physics
• Year: 2005
• Tongue: English
• Weight: 428 KB
• Volume: 98
• Category: Article
• ISSN: 0021-8979
• DOI: 10.1063/1.2008388