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Structure and annealing properties of silicon carbide thin layers formed by implantation of carbon ions in silicon

✍ Scribed by Tadamasa Kimura; Shigeru Kagiyama; Shigemi Yugo


Publisher
Elsevier Science
Year
1981
Tongue
English
Weight
683 KB
Volume
81
Category
Article
ISSN
0040-6090

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