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Auger electron spectroscopy analysis of SiC layers formed by carbon ion implantation into silicon

✍ Scribed by Tadamasa Kimura; Shigemi Yugo; Shigeru Kagiyama; Yoshio Machi

Publisher
Elsevier Science
Year
1984
Tongue
English
Weight
549 KB
Volume
122
Category
Article
ISSN
0040-6090

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The inΓ‘uence of high-energy Si' irradiation on carbon-implanted silicon at low temperature was studied. C' Ions of kinetic energy 25 keV were implanted into Si(100) at room temperature with a dose density of 1 Γ‚ 1017 ions cm-2 after amorphization of the surface region by Ge' implantation at 200 keV.