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Some properties of metal/insulator/semiconductor structures with BN and carbon thin layers formed by the reactive pulse plasma method on silicon or SiO2 substrates and annealing effects

✍ Scribed by J. Szmidt; A. Jakubowski; A. Balasiński


Publisher
Elsevier Science
Year
1986
Tongue
English
Weight
520 KB
Volume
142
Category
Article
ISSN
0040-6090

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