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The effects of implantation dose and anneal temperature on the layered structure and electrical properties of oxygen-ion-implanted silicon-on-insulator

✍ Scribed by Pradip K. Dutta; Sorin Cristoloveanu


Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
693 KB
Volume
22
Category
Article
ISSN
0026-2692

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