The Effect of Annealing Temperature on Electrical Properties of SrBi2Ta2O9/Insulators/Si(MFIS) Structure for NDRO-type FRAM Devices

✍ Scribed by B. G. Yu; W. J. Lee; C. R. Cho; C. H. Shin; B. W. Kim

• Publisher: John Wiley and Sons
• Year: 1999
• Tongue: English
• Weight: 311 KB
• Volume: 34
• Category: Article
• ISSN: 0232-1300
• DOI: 10.1002/(sici)1521-4079(199911)34:9<1197::aid-crat1197>3.0.co;2-n