The effects of implantation dose and anneal temperature on the layered structure and electrical properties of oxygen-ion-implanted silicon-on-insulator : Pradip K. Dutta and Sorin Cristoloveanu. Microelectron. J. 22(7/8), 67 (1991)

• Publisher: Elsevier Science
• Year: 1992
• Tongue: English
• Weight: 81 KB
• Volume: 32
• Category: Article
• ISSN: 0026-2714
• DOI: 10.1016/0026-2714(92)90771-c