Sources of SIMOX buried oxide leakage
โ Scribed by M.J. Anc; W.A. Krull
- Book ID
- 103599438
- Publisher
- Elsevier Science
- Year
- 1995
- Tongue
- English
- Weight
- 291 KB
- Volume
- 28
- Category
- Article
- ISSN
- 0167-9317
No coin nor oath required. For personal study only.
๐ SIMILAR VOLUMES
After a short summary of the status of the buried 6x~qCle layer in SIMOX structures as of 1994, this pal~er reviews the developments since then. The main fOf~iCS are as follows: effects of processing condltiOttS, such aS low oxygen dose implantation, add;lionel oxidation; holetrappng behavior and co
The transport characteristics of mobile H ions are examined in SIMOX buried oxides. The H ions are created in the 1 buried oxides by annealing in H gas. The effects of applied oxide field and H concentration are investigated in order to 2 1 1 develop a model for the mechanism of the H motion. Result