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Trapping dependent H+ motion in SIMOX buried oxides

✍ Scribed by P.J Macfarlane; R.E Stahlbush

Publisher: Elsevier Science
Year: 2001
Tongue: English
Weight: 341 KB
Volume: 59
Category: Article
ISSN: 0167-9317
DOI: 10.1016/s0167-9317(01)00665-7

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✦ Synopsis

The transport characteristics of mobile H ions are examined in SIMOX buried oxides. The H ions are created in the 1 buried oxides by annealing in H gas. The effects of applied oxide field and H concentration are investigated in order to 2 1 1 develop a model for the mechanism of the H motion. Results suggest the H motion across the oxide is limited by the detrapping of the mobile charges from defects located near the top Si / SiO and substrate Si / SiO interfaces. Comparisons of 2 2 1 the samples annealed under differing conditions indicate that the H trapping defects are created and / or modified during the hydrogenation.

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