Evaluation of buried oxide formation in low-dose SIMOX process

✍ Scribed by A Ogura; H Ono

• Publisher: Elsevier Science
• Year: 2000
• Tongue: English
• Weight: 432 KB
• Volume: 159-160
• Category: Article
• ISSN: 0169-4332
• DOI: 10.1016/s0169-4332(00)00056-8

✦ Synopsis

Ž

. Formation of a buried oxide BOX layer during high-temperature annealing in a separation by implanted oxygen Ž . Ž . SIMOX process was evaluated by means of Fourier-transform infrared FTIR absorption spectroscopy. The evaluation results suggested that the formation process could be controlled by changing the ramping rate and the oxygen concentration in the atmosphere during high-temperature annealing. This was confirmed through TEM observation after annealing under various conditions. Reduction of the O q implantation dose was enabled by adopting a slow ramping rate for the annealing. Ž . Ž . Novel Si-on-insulator SOI structures with a BOX layer at the damage-peak Dp depth and a double BOX layer at both Dp Ž .

q and Rp projection range depths were obtained, depending on the O implantation dose, by applying a combination of a slow ramping rate and a high oxygen concentration in the atmosphere. The atmospheric oxygen enhanced the growth of the oxide precipitate and smoothed the SiO rSi interfaces of the SOI structures.