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Charge trapping in SIMOX and UNIBOND® oxides

✍ Scribed by O. Gruber; P. Paillet; J.L. Autran; B. Aspar; A.J. Auberton-Hervé

Publisher
Elsevier Science
Year
1997
Tongue
English
Weight
293 KB
Volume
36
Category
Article
ISSN
0167-9317

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✦ Synopsis

The behavior under irradiation of a new SOI material, UNIBOND ®, is compared to the behavior of SIMOX material through the radiative response of MOS transistors processed on these two substrates. From these results we deduce the trap properties of the buried oxides, and show that electron trapping occurs at high dose in both cases. The charge trapping properties of UNIBOND ® , quite similar to SIMOX, could be explained by the high temperature anneal step used in the fabrication process.

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