The behavior under irradiation of a new SOI material, UNIBOND ®, is compared to the behavior of SIMOX material through the radiative response of MOS transistors processed on these two substrates. From these results we deduce the trap properties of the buried oxides, and show that electron trapping o
✦ LIBER ✦
Trapping of photogenerated charges in oxide nanoparticles
✍ Scribed by Thomas Berger; Martin Sterrer; Slavica Stankic; Johannes Bernardi; Oliver Diwald; Erich Knözinger
- Publisher
- Elsevier Science
- Year
- 2005
- Tongue
- English
- Weight
- 781 KB
- Volume
- 25
- Category
- Article
- ISSN
- 0928-4931
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In this paper we have studied the effect of accelerated thermal ageing on the electrical properties of amorphous silicon oxide films a-SiO 2 . In order to study the charge trapping phenomenon in this material, we have performed the mirror method using a secondary Electron Microscope (SEM). This meth