Charge trapping and ac conductivity in Amorphous Silicon Oxide

✍ Scribed by F. Tarrach; A. Ch’hayder; S. Guermazi

• Publisher: Elsevier
• Year: 2009
• Tongue: English
• Weight: 294 KB
• Volume: 2
• Category: Article
• ISSN: 1875-3892
• DOI: 10.1016/j.phpro.2009.11.047

✦ Synopsis

In this paper we have studied the effect of accelerated thermal ageing on the electrical properties of amorphous silicon oxide films a-SiO 2 . In order to study the charge trapping phenomenon in this material, we have performed the mirror method using a secondary Electron Microscope (SEM). This method consists to inject a negative space charge in the specimen with a high energy electron beam. Results show that trapped charges increase with thermal ageing time. Dielectric investigations performed in the frequency range between 20 Hz and 1 MHz, showed that the relative permittivity increases with thermal ageing time. The ac conductivity has been found to follow the Jonsher law n ac αω σ . The decrease of ac conductivity has been interpreted.