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Slow luminescence from trapped charges in oxidized porous silicon

✍ Scribed by A. Kux; D. Kovalev; F. Koch

Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
315 KB
Volume
255
Category
Article
ISSN
0040-6090

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In this paper we have studied the effect of accelerated thermal ageing on the electrical properties of amorphous silicon oxide films a-SiO 2 . In order to study the charge trapping phenomenon in this material, we have performed the mirror method using a secondary Electron Microscope (SEM). This meth