Properties of the buried oxide layer in SIMOX structures

✍ Scribed by A.G. Revesz; H.L. Hughes

• Publisher: Elsevier Science
• Year: 1997
• Tongue: English
• Weight: 605 KB
• Volume: 36
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/s0167-9317(97)00077-4

✦ Synopsis

After a short summary of the status of the buried 6x~qCle layer in SIMOX structures as of 1994, this pal~er reviews the developments since then. The main fOf~iCS are as follows: effects of processing condltiOttS, such aS low oxygen dose implantation, add;lionel oxidation; holetrappng behavior and confinemeft{ i~(}(~tSi AFM studies of the BOX and the BOX/$i-substrate interface. It will be shown thai t)0i(~ oxid~ f16tW0rk lind defects in the BOX are significantly different from those of thermally grown Si0~ ~lrid d0pend on the preparation conditions.