The transport characteristics of mobile H ions are examined in SIMOX buried oxides. The H ions are created in the 1 buried oxides by annealing in H gas. The effects of applied oxide field and H concentration are investigated in order to 2 1 1 develop a model for the mechanism of the H motion. Result
โฆ LIBER โฆ
Electron trapping in irradiated SIMOX buried oxides
โ Scribed by T. Ouisse; S. Cristoloveanu; G. Borel
- Book ID
- 124166140
- Publisher
- IEEE
- Year
- 1991
- Tongue
- English
- Weight
- 251 KB
- Volume
- 12
- Category
- Article
- ISSN
- 0741-3106
- DOI
- 10.1109/55.82071
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The behavior under irradiation of a new SOI material, UNIBOND ยฎ, is compared to the behavior of SIMOX material through the radiative response of MOS transistors processed on these two substrates. From these results we deduce the trap properties of the buried oxides, and show that electron trapping o