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Defect electrical conduction in SIMOX buried oxides

โœ Scribed by Brown, G.A.; Revesz, A.G.


Book ID
114535226
Publisher
IEEE
Year
1993
Tongue
English
Weight
615 KB
Volume
40
Category
Article
ISSN
0018-9383

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The transport characteristics of mobile H ions are examined in SIMOX buried oxides. The H ions are created in the 1 buried oxides by annealing in H gas. The effects of applied oxide field and H concentration are investigated in order to 2 1 1 develop a model for the mechanism of the H motion. Result

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After a short summary of the status of the buried 6x~qCle layer in SIMOX structures as of 1994, this pal~er reviews the developments since then. The main fOf~iCS are as follows: effects of processing condltiOttS, such aS low oxygen dose implantation, add;lionel oxidation; holetrappng behavior and co