Defect electrical conduction in SIMOX buried oxides
โ Scribed by Brown, G.A.; Revesz, A.G.
- Book ID
- 114535226
- Publisher
- IEEE
- Year
- 1993
- Tongue
- English
- Weight
- 615 KB
- Volume
- 40
- Category
- Article
- ISSN
- 0018-9383
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๐ SIMILAR VOLUMES
The transport characteristics of mobile H ions are examined in SIMOX buried oxides. The H ions are created in the 1 buried oxides by annealing in H gas. The effects of applied oxide field and H concentration are investigated in order to 2 1 1 develop a model for the mechanism of the H motion. Result
After a short summary of the status of the buried 6x~qCle layer in SIMOX structures as of 1994, this pal~er reviews the developments since then. The main fOf~iCS are as follows: effects of processing condltiOttS, such aS low oxygen dose implantation, add;lionel oxidation; holetrappng behavior and co