Photo-assisted charge injection techniques in conjunction with capacitance-voltage measurements have been used to study 16 22 electron and hole trapping in thermal oxides implanted with up to 1 3 10 cm Si or Ar. Defects having large cross sections for electron trapping and photoionization are found
โฆ LIBER โฆ
Hole and electron trapping in ion implanted thermal oxides and SIMOX
โ Scribed by Mrstik, B.J.; Hughes, H.L.; McMarr, P.J.; Lawrence, R.K.; Ma, D.I.; Isaacson, I.P.; Walker, R.A.
- Book ID
- 120652045
- Publisher
- IEEE
- Year
- 2000
- Tongue
- English
- Weight
- 137 KB
- Volume
- 47
- Category
- Article
- ISSN
- 0018-9499
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