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Thermal depopulation studies of electron traps in ion implanted silica layers

✍ Scribed by I. Strzałkowski; M. Marczewski; M. Kowalski


Publisher
Springer
Year
1986
Tongue
English
Weight
379 KB
Volume
40
Category
Article
ISSN
1432-0630

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Photo-assisted charge injection techniques in conjunction with capacitance-voltage measurements have been used to study 16 22 electron and hole trapping in thermal oxides implanted with up to 1 3 10 cm Si or Ar. Defects having large cross sections for electron trapping and photoionization are found