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Thermal energy depth of electron traps in the SiO2 layer of the ion-implanted MOS structure

✍ Scribed by M. Marczewski; I. Strza⌈kowski; M. Kowalski; H. Dra̧żyk


Publisher
Elsevier Science
Year
1984
Tongue
English
Weight
208 KB
Volume
49
Category
Article
ISSN
0038-1098

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