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Thin SiO2 films formed by oxygen ion implantation in silicon: Electron microscope investigations of the Si-SiO2 interface structures and their c-v characteristics

โœ Scribed by J. Dylewski; M.C. Joshi


Publisher
Elsevier Science
Year
1976
Tongue
English
Weight
967 KB
Volume
37
Category
Article
ISSN
0040-6090

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