The dielectric breakdown properties and I–V characteristics of thin SiO2 films formed by high dose oxygen ion implantation into silicon

✍ Scribed by J. Dylewski; M.C. Joshi

• Publisher: Elsevier Science
• Year: 1977
• Tongue: English
• Weight: 544 KB
• Volume: 42
• Category: Article
• ISSN: 0040-6090
• DOI: 10.1016/0040-6090(77)90421-7