Electron and hole trapping in thermal oxides that have been ion implanted

✍ Scribed by B.J Mrstik; H.L Hughes; P.J McMarr; P Gouker

• Publisher: Elsevier Science
• Year: 2001
• Tongue: English
• Weight: 141 KB
• Volume: 59
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/s0167-9317(01)00611-6

✦ Synopsis

Photo-assisted charge injection techniques in conjunction with capacitance-voltage measurements have been used to study 16 22 electron and hole trapping in thermal oxides implanted with up to 1 3 10 cm Si or Ar. Defects having large cross sections for electron trapping and photoionization are found in oxides implanted with large doses of Si, but not of Ar, suggesting the formation of Si clusters. It is also found that the magnitude of the shift in the flatband voltage, DV , resulting fb 15 22

from hole trapping is increased in oxides implanted with up to 1310 cm Si or Ar. In oxides implanted with higher doses of Si, however, DV is decreased. An explanation is proposed involving trapping of radiolytic hydrogen at Si clusters.

fb