Generation of metastable electron traps in the near interfacial region of SOI buried oxides by ion implantation and their effect on device properties

✍ Scribed by J.R Schwank; D.M Fleetwood; H.D Xiong; M.R Shaneyfelt; B.L Draper

• Publisher: Elsevier Science
• Year: 2004
• Tongue: English
• Weight: 217 KB
• Volume: 72
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/j.mee.2004.01.032