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Simulation of oxide sputtering and SIMS depth profiling of delta-doped layer

โœ Scribed by Y. Yamamura; M. Ishida


Book ID
108417833
Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
203 KB
Volume
203-204
Category
Article
ISSN
0169-4332

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SIMS Depth Profiling of Delta-doped Laye
โœ Smirnov, V. K.; Simakin, S. G.; Potapov, E. V.; Makarov, V. V. ๐Ÿ“‚ Article ๐Ÿ“… 1996 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 723 KB

Boron and germanium 6-doped silicon samples were studied using SIMS depth profiling on a Cameca IMS-4F instrument with O,', N z + and Cs' primary beams at various energies and incidence angles. The depth resolution characteristics were compared. We show that, with experimental conditions being the s