Amorphous TiO x N y films of varying stoichiometry have been deposited on Si and Cu substrates using ionassisted deposition (IAD). The structure of the films and the effects of annealing in the 200-450 ยฐC range have been examined. Secondary ion mass spectrometry (SIMS) has been used to investigate
SIMS depth profiling and TEM imaging of the SIMS altered layer
โ Scribed by A. Christofi; J.F. Walker; D.S. McPhail
- Publisher
- Elsevier Science
- Year
- 2008
- Tongue
- English
- Weight
- 990 KB
- Volume
- 255
- Category
- Article
- ISSN
- 0169-4332
No coin nor oath required. For personal study only.
๐ SIMILAR VOLUMES
Boron and germanium 6-doped silicon samples were studied using SIMS depth profiling on a Cameca IMS-4F instrument with O,', N z + and Cs' primary beams at various energies and incidence angles. The depth resolution characteristics were compared. We show that, with experimental conditions being the s
The nature of noise in SIMS depth profiling data has been investigated theoretically. I show that, as earlier experiments proved, the noise of the signal measured with a perfect (absolutely stable) SIMS instrument obeys Poisson's law. Theoretical analysis of the contributions from statistical fluctu