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Depth profiling of microelectronic structures by SIMS and AES

✍ Scribed by M Maier


Publisher
Elsevier Science
Year
1986
Tongue
English
Weight
374 KB
Volume
36
Category
Article
ISSN
0042-207X

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Amorphous TiO x N y films of varying stoichiometry have been deposited on Si and Cu substrates using ionassisted deposition (IAD). The structure of the films and the effects of annealing in the 200-450 Β°C range have been examined. Secondary ion mass spectrometry (SIMS) has been used to investigate

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Depth profiles have been made for a new batch of the certified reference material, BCR 261, of ~30 nm and 100 nm of anodic tantalum pentoxide layers on tantalum foil. Atomic force microscopy studies show that the preparation method traditionally used provides an excellent substrate root-mean-square