Depth profiling of microelectronic structures by SIMS and AES
β Scribed by M Maier
- Publisher
- Elsevier Science
- Year
- 1986
- Tongue
- English
- Weight
- 374 KB
- Volume
- 36
- Category
- Article
- ISSN
- 0042-207X
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Amorphous TiO x N y films of varying stoichiometry have been deposited on Si and Cu substrates using ionassisted deposition (IAD). The structure of the films and the effects of annealing in the 200-450 Β°C range have been examined. Secondary ion mass spectrometry (SIMS) has been used to investigate
Depth profiles have been made for a new batch of the certified reference material, BCR 261, of ~30 nm and 100 nm of anodic tantalum pentoxide layers on tantalum foil. Atomic force microscopy studies show that the preparation method traditionally used provides an excellent substrate root-mean-square