𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Ultimate depth resolution and profile reconstruction in sputter profiling with AES and SIMS

✍ Scribed by Siegfried Hofmann


Publisher
John Wiley and Sons
Year
2000
Tongue
English
Weight
200 KB
Volume
30
Category
Article
ISSN
0142-2421

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


Depth resolution in sputter depth profil
✍ Seah, M. P.; Spencer, S. J.; Gilmore, I. S.; Johnstone, J. E. πŸ“‚ Article πŸ“… 2000 πŸ› John Wiley and Sons 🌐 English βš– 318 KB πŸ‘ 2 views

Depth profiles have been made for a new batch of the certified reference material, BCR 261, of ~30 nm and 100 nm of anodic tantalum pentoxide layers on tantalum foil. Atomic force microscopy studies show that the preparation method traditionally used provides an excellent substrate root-mean-square

Sputtering-induced surface roughness of
✍ WΓΆhner, T.; Ecke, G.; Râßler, H.; Hofmann, S. πŸ“‚ Article πŸ“… 1998 πŸ› John Wiley and Sons 🌐 English βš– 495 KB πŸ‘ 2 views

Sputtering-induced surface roughness is the main source of degradation of the depth resolution observed during depth proÐling of polycrystalline metals. Atomic force microscopy (AFM) images of polycrystalline Al Ðlms at di †erent mean sputtered depths are used to calculate both the depth distributio

Characterization of titanium hydride fil
✍ Lisowski, W.; van den Berg, A. H. J.; Leonard, D.; Mathieu, H. J. πŸ“‚ Article πŸ“… 2000 πŸ› John Wiley and Sons 🌐 English βš– 98 KB πŸ‘ 2 views

Thin titanium hydride (TiH y ) films, covered by ultrathin gold layers, have been compared with the corresponding titanium films after analysis using a combination of time-of-flight SIMS (ToF-SIMS), XPS and AES. The TiH y layers were prepared under UHV conditions by precisely controlled hydrogen sor

Effectiveness and Limits of the Deconvol
✍ Gautier, B.; Dupuy, J. C.; Prost, R.; Prudon, G. πŸ“‚ Article πŸ“… 1997 πŸ› John Wiley and Sons 🌐 English βš– 533 KB

In this paper, an iterative algorithm is used in order to deconvolve some real and simulated SIMS proÐles of boron-doped layers in silicon. The real SIMS proÐles are obtained by the analysis of delta layers of boron-doped silicon in a silicon matrix, analysed in a Cameca IMS3/4f instrument at obliq

Non-uniform sputtering and degradation o
✍ Shimizu, K.; Habazaki, H.; Skeldon, P.; Thompson, G. E.; Wood, G. C. πŸ“‚ Article πŸ“… 1999 πŸ› John Wiley and Sons 🌐 English βš– 529 KB

Degradation of depth resolution during glow discharge optical emission spectroscopy (GDOES) depth profiling analysis of thin films, formed on relatively rough substrates, has been investigated using preconditioned aluminium substrates of controlled surface roughness. The anodic alumina films, ~120 n