Depth profiles have been made for a new batch of the certified reference material, BCR 261, of ~30 nm and 100 nm of anodic tantalum pentoxide layers on tantalum foil. Atomic force microscopy studies show that the preparation method traditionally used provides an excellent substrate root-mean-square
Ultimate depth resolution and profile reconstruction in sputter profiling with AES and SIMS
β Scribed by Siegfried Hofmann
- Publisher
- John Wiley and Sons
- Year
- 2000
- Tongue
- English
- Weight
- 200 KB
- Volume
- 30
- Category
- Article
- ISSN
- 0142-2421
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π SIMILAR VOLUMES
Sputtering-induced surface roughness is the main source of degradation of the depth resolution observed during depth proΓling of polycrystalline metals. Atomic force microscopy (AFM) images of polycrystalline Al Γlms at di β erent mean sputtered depths are used to calculate both the depth distributio
Thin titanium hydride (TiH y ) films, covered by ultrathin gold layers, have been compared with the corresponding titanium films after analysis using a combination of time-of-flight SIMS (ToF-SIMS), XPS and AES. The TiH y layers were prepared under UHV conditions by precisely controlled hydrogen sor
In this paper, an iterative algorithm is used in order to deconvolve some real and simulated SIMS proΓles of boron-doped layers in silicon. The real SIMS proΓles are obtained by the analysis of delta layers of boron-doped silicon in a silicon matrix, analysed in a Cameca IMS3/4f instrument at obliq
Degradation of depth resolution during glow discharge optical emission spectroscopy (GDOES) depth profiling analysis of thin films, formed on relatively rough substrates, has been investigated using preconditioned aluminium substrates of controlled surface roughness. The anodic alumina films, ~120 n