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Effectiveness and Limits of the Deconvolution of SIMS Depth Profiles of Boron in Silicon

✍ Scribed by Gautier, B.; Dupuy, J. C.; Prost, R.; Prudon, G.

Publisher: John Wiley and Sons
Year: 1997
Tongue: English
Weight: 533 KB
Volume: 25
Category: Article
ISSN: 0142-2421
DOI: 10.1002/(sici)1096-9918(199706)25:6<464::aid-sia271>3.0.co;2-#

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✦ Synopsis

In this paper, an iterative algorithm is used in order to deconvolve some real and simulated SIMS proÐles of boron-doped layers in silicon.

The real SIMS proÐles are obtained by the analysis of delta layers of boron-doped silicon in a silicon matrix, analysed in a Cameca IMS3/4f instrument at oblique incidence. It is shown that two layers that are completely convolved by the SIMS experiment can be completely separated. In order to try to solve the problem of reliability of the deconvolution results, a conÐdence level is deÐned, which indicates the level below which the deconvolved proÐle should not be taken into account. Moreover, a parameter deÐned previously is used to deÐne whether a satisfying solution of the deconvolution problem exists or not. This parameter is applied to the experimental proÐles.

The simulated proÐles are chosen so that they correspond to real cases encountered by the SIMS analysts and clarify what can be expected from the method. Several characteristic features are examined, such as the separability of Gaussian functions or the dynamic range of the deconvolution of rising or falling functions. It is shown that the minimum distance between two delta layers that can be separated using 3.5 primary beam SIMS keV/O 2 ' analysis at oblique incidence is equal to 60 and that abrupt error functions and exponential functions can be A , retrieved very satisfactorily.

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