Depth profiles have been made for a new batch of the certified reference material, BCR 261, of ~30 nm and 100 nm of anodic tantalum pentoxide layers on tantalum foil. Atomic force microscopy studies show that the preparation method traditionally used provides an excellent substrate root-mean-square
Toward a better reliability in the deconvolution of SIMS depth profiles
β Scribed by Gautier, B.; Prudon, G.; Dupuy, J. C.
- Publisher
- John Wiley and Sons
- Year
- 1998
- Tongue
- English
- Weight
- 273 KB
- Volume
- 26
- Category
- Article
- ISSN
- 0142-2421
No coin nor oath required. For personal study only.
β¦ Synopsis
In this paper, the problem of the deconvolution of SIMS depth proΓles is addressed. In particular, the hypotheses that are necessary for the deconvolution to be possible (in the actual state of the art) in the case of the SIMS signal are reviewed. Then, the principle of regularization, which is a mandatory step in the resolution of an ill-posed problem, is clariΓed. Two regularization methods used in the Γeld of SIMS analysis are compared : Miller regularization and maximum entropy regularization.
In a second part the study of a possible deconvolution, using a depth resolution function (DRF) that is not the DRF that has experimentally convolved the proΓle, is justiΓed and theoretically addressed. Two cases arise : the DRF used in the deconvolution process is either thinner than the experimental DRF or it is thicker. It is shown that deconvolution using a DRF that is wider than the DRF that actually convolved the proΓle is possible, and must be taken into consideration. Some examples of simulated deconvolutions with a false DRF are given, and some tools are proposed that are theoretically able to detect a problem when the DRF used in the deconvolution process is wider than the real DRF.
In the last section, an example of experimental deconvolution shows that the deconvolution process is able to provide reliable information. In particular, deconvolution of a SIMS analysis conducted at 5.5 keV and 42.4Γ O 2 ' incidence (in a Cameca IMS 3/4f) reveals some features of the sample that require at least 1 keV and 60Γ O 2 ' primary beam incidence to be detected experimentally.
π SIMILAR VOLUMES
Secondary ion yields are known to be strongly enhanced by the presence of oxygen in the analysed sample. The magnitude of the yield enhancement is often signiΓcantly di β erent for impurity and matrix ion species. This kind of SIMS matrix e β ect severely aggravates concentration calibration in depth