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SIMS Depth Profiling of Delta-doped Layers in Silicon

✍ Scribed by Smirnov, V. K.; Simakin, S. G.; Potapov, E. V.; Makarov, V. V.

Publisher: John Wiley and Sons
Year: 1996
Tongue: English
Weight: 723 KB
Volume: 24
Category: Article
ISSN: 0142-2421
DOI: 10.1002/(sici)1096-9918(199607)24:7<469::aid-sia140>3.0.co;2-u

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✦ Synopsis

Boron and germanium 6-doped silicon samples were studied using SIMS depth profiling on a Cameca IMS-4F instrument with O,', N z + and Cs' primary beams at various energies and incidence angles. The depth resolution characteristics were compared. We show that, with experimental conditions being the same, the N, + primary beam provides for better decay lengths, while the leading edges of the profiles turn out to be significantly broadened because of the beam-induced roughness which develops at an early stage of silicon bombardment by N, + ions.

The influence of ripplelike roughness on the SIMS profile shape is considered within the present simple analytical model.

The effect of a modified layer on the SIMS profile depth was experimentally investigated. For profiles obtained with an N, + primary beam, it was shown that swelling of the modified layer produced by the implantation and trapping of primary particles shifts the profile as a whole toward the surface.

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