๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

GaAs delta-doped layers in Si for evaluation of SIMS depth resolution GaAs

โœ Scribed by D. W. Moon; J. Y. Won; K. J. Kim; H. J. Kim; H. J. Kang; M. Petravic

Publisher
John Wiley and Sons
Year
2000
Tongue
English
Weight
153 KB
Volume
29
Category
Article
ISSN
0142-2421

No coin nor oath required. For personal study only.

โœฆ Synopsis

Due to the complicated artefacts in SIMS depth profiling, SIMS depth resolution is difficult to evaluate. For evaluation of the SIMS depth resolution, delta-doped layers are more useful than sharp interfaces, because the matrix effect and the sputtering rate change can be minimized in profiling through delta layers. The GaAs delta-doped layers in Si were grown and proposed as a reference material for the evaluation of SIMS depth resolution. The SIMS depth resolution was estimated using the analytical expression based on a double exponential with a Gaussian, and its dependence on SIMS analysis conditions such as ion energy, ion species and incidence angle was studied with the proposed GaAs delta-doped multilayers in Si.

๐Ÿ“œ SIMILAR VOLUMES

SIMS Depth Profiling of Delta-doped Laye
SIMS Depth Profiling of Delta-doped Layers in Silicon
โœ Smirnov, V. K.; Simakin, S. G.; Potapov, E. V.; Makarov, V. V. ๐Ÿ“‚ Article ๐Ÿ“… 1996 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 723 KB

Boron and germanium 6-doped silicon samples were studied using SIMS depth profiling on a Cameca IMS-4F instrument with O,', N z + and Cs' primary beams at various energies and incidence angles. The depth resolution characteristics were compared. We show that, with experimental conditions being the s