Formation of n+-Layers in Undoped and Indium-Doped GaAs Wafers by Si and Si+P Ion Implantation

✍ Scribed by Chaldyshev, V. V. ;Dymova, N. N. ;Kunitsyn, A. E. ;Markov, A. V.

• Publisher: John Wiley and Sons
• Year: 1997
• Tongue: English
• Weight: 202 KB
• Volume: 163
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/1521-396x(199709)163:1<81::aid-pssa81>3.0.co;2-j