𝔖 Bobbio Scriptorium
✦   LIBER   ✦

High Spatial Resolution Raman Investigations: of Grown-in Dislocations in Si-doped GaAs

✍ Scribed by Dr. O. Pätzold; Dr. G. Irmer; Prof. Dr. J. Monecke

Publisher
John Wiley and Sons
Year
1992
Tongue
English
Weight
292 KB
Volume
27
Category
Article
ISSN
0232-1300

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

GaAs delta-doped layers in Si for evalua
GaAs delta-doped layers in Si for evaluation of SIMS depth resolution GaAs
✍ D. W. Moon; J. Y. Won; K. J. Kim; H. J. Kim; H. J. Kang; M. Petravic 📂 Article 📅 2000 🏛 John Wiley and Sons 🌐 English ⚖ 153 KB 👁 1 views

Due to the complicated artefacts in SIMS depth profiling, SIMS depth resolution is difficult to evaluate. For evaluation of the SIMS depth resolution, delta-doped layers are more useful than sharp interfaces, because the matrix effect and the sputtering rate change can be minimized in profiling thro

High-resolution Raman investigation of t
High-resolution Raman investigation of the vibrational relaxation of two-phonon bound states in solid CO2 at different temperatures
✍ P. Ranson; R. Ouillon; S. Califano 📂 Article 📅 1986 🏛 John Wiley and Sons 🌐 English ⚖ 380 KB 👁 1 views

The Raman spectra of the bound states a, and 0of the Fermi diad w,:202 in crystalline COz have been measured at several temperatures under very high resolution. Band profiles have been determined for each of the two factor group components, one A, and one F,, of the two states. The evolution with t

Atomic force microscopy and high-resolut
Atomic force microscopy and high-resolution RBS investigation of the surface modification of magnetron sputter-etched Si(111) in an argon plasma at different pressures
✍ Deenapanray, P. N. K.; Hillie, K. T.; Demanet, C. M.; Ridgway, M. C. 📂 Article 📅 1999 🏛 John Wiley and Sons 🌐 English ⚖ 353 KB 👁 2 views

The surface morphology and metallic contamination of magnetron sputter-etched Si(111) was investigated by atomic force microscopy (AFM) and high-resolution Rutherford backscattering spectroscopy (RBS) as a function of Ar plasma pressure. The root-mean-square roughness (R rms ) of plasma-etched Si de