Amorphous TiO x N y films of varying stoichiometry have been deposited on Si and Cu substrates using ionassisted deposition (IAD). The structure of the films and the effects of annealing in the 200-450 Β°C range have been examined. Secondary ion mass spectrometry (SIMS) has been used to investigate
Nature of noise in SIMS depth profiling data
β Scribed by Makarov, V. V.
- Publisher
- John Wiley and Sons
- Year
- 1999
- Tongue
- English
- Weight
- 60 KB
- Volume
- 27
- Category
- Article
- ISSN
- 0142-2421
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β¦ Synopsis
The nature of noise in SIMS depth profiling data has been investigated theoretically. I show that, as earlier experiments proved, the noise of the signal measured with a perfect (absolutely stable) SIMS instrument obeys Poisson's law. Theoretical analysis of the contributions from statistical fluctuations and the SIMS instrument operation instability to the noise has shown that deviation from Poisson's law originates from unstable operation of the SIMS instrument. An analytical expression for the noise has been obtained and this agrees well with experimental data.
π SIMILAR VOLUMES
Boron and germanium 6-doped silicon samples were studied using SIMS depth profiling on a Cameca IMS-4F instrument with O,', N z + and Cs' primary beams at various energies and incidence angles. The depth resolution characteristics were compared. We show that, with experimental conditions being the s
In this paper, the problem of the deconvolution of SIMS depth proΓles is addressed. In particular, the hypotheses that are necessary for the deconvolution to be possible (in the actual state of the art) in the case of the SIMS signal are reviewed. Then, the principle of regularization, which is a ma
In this paper, an iterative algorithm is used in order to deconvolve some real and simulated SIMS proΓles of boron-doped layers in silicon. The real SIMS proΓles are obtained by the analysis of delta layers of boron-doped silicon in a silicon matrix, analysed in a Cameca IMS3/4f instrument at obliq