SIMS Depth Profiling of Delta-doped Laye
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Smirnov, V. K.; Simakin, S. G.; Potapov, E. V.; Makarov, V. V.
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Article
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1996
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John Wiley and Sons
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English
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Boron and germanium 6-doped silicon samples were studied using SIMS depth profiling on a Cameca IMS-4F instrument with O,', N z + and Cs' primary beams at various energies and incidence angles. The depth resolution characteristics were compared. We show that, with experimental conditions being the s