๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

SIMS quantitative depth profiling of matrix elements in semiconductor layers

โœ Scribed by G. Guryanov; T.P. St. Clair; R. Bhat; C. Caneau; S. Nikishin; B. Borisov; A. Budrevich


Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
111 KB
Volume
252
Category
Article
ISSN
0169-4332

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


SIMS Depth Profiling of Delta-doped Laye
โœ Smirnov, V. K.; Simakin, S. G.; Potapov, E. V.; Makarov, V. V. ๐Ÿ“‚ Article ๐Ÿ“… 1996 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 723 KB

Boron and germanium 6-doped silicon samples were studied using SIMS depth profiling on a Cameca IMS-4F instrument with O,', N z + and Cs' primary beams at various energies and incidence angles. The depth resolution characteristics were compared. We show that, with experimental conditions being the s