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Depth profiling techniques for the elemental analysis of semiconductor layers

โœ Scribed by DE Sykes


Publisher
Elsevier Science
Year
1990
Tongue
English
Weight
260 KB
Volume
40
Category
Article
ISSN
0042-207X

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Ion beam analysis (IBA) methods were used for the characterization of interdiffusion in thin Au-A1 multilayered systems. Conventional RBS with a high depth resolution at the specimen surface and at the interfaces (e.g. 14 nm in the depth of 255 nm) was used for gold depth profiling. In contrast to g