Rapid automatic compensation for charging effects during the SIMS depth profiling of semiconductors

Concentration-depth calibration and bomb

Concentration-depth calibration and bombardment-induced impurity relocation in SIMS depth profiling of shallow through-oxide implantation distributions: a procedure for eliminating the matrix effect

✍ Wittmaack, K. 📂 Article 📅 1998 🏛 John Wiley and Sons 🌐 English ⚖ 429 KB 👁 1 views

Secondary ion yields are known to be strongly enhanced by the presence of oxygen in the analysed sample. The magnitude of the yield enhancement is often signiÐcantly di †erent for impurity and matrix ion species. This kind of SIMS matrix e †ect severely aggravates concentration calibration in depth