SIMS depth profiling of implanted layers in silicon under N2+ ion bombardment
β Scribed by VK Smirnov; SG Simakin
- Publisher
- Elsevier Science
- Year
- 1993
- Tongue
- English
- Weight
- 279 KB
- Volume
- 44
- Category
- Article
- ISSN
- 0042-207X
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π SIMILAR VOLUMES
Boron and germanium 6-doped silicon samples were studied using SIMS depth profiling on a Cameca IMS-4F instrument with O,', N z + and Cs' primary beams at various energies and incidence angles. The depth resolution characteristics were compared. We show that, with experimental conditions being the s
Secondary ion yields are known to be strongly enhanced by the presence of oxygen in the analysed sample. The magnitude of the yield enhancement is often signiΓcantly di β erent for impurity and matrix ion species. This kind of SIMS matrix e β ect severely aggravates concentration calibration in depth