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Experimental method for measuring both atom and carrier concentration profiles in the same sample of ion-implanted silicon layers by radioactive-ion implantation

✍ Scribed by Masaya Iwaki; Kenji Gamo; Kohzo Masuda; Susumu Namba; Shinji Ishihara; Itsuro Kimura; Katsuhiro Yokota


Publisher
Elsevier Science
Year
1975
Weight
436 KB
Volume
127
Category
Article
ISSN
0029-554X

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